| 摘要 |
<p>The device has a first layer i.e. connection region (1), made of p-doped semiconductor material i.e. silicon, having a specific band gap, and second and third layers i.e. tunnel barriers (3, 5), made of material having higher band gap. A fourth layer i.e. quantum well (4), is made of material having smaller band gap and higher light absorption, and a fifth layer i.e. connection region (2), is made of n-doped semiconductor material i.e. silicon, having the specific band gap, where the fifth layer has less thickness, such that the incident light reaches the second, third and fourth layers. The layers formed from single-crystalline silicon wafer or multi-crystalline silicon wafer or silicon film or glass or metal coated glass. The tunnel barriers are made of silicon and carbon. An independent claim is also included for a method for forming a bipolar semiconductor device.</p> |
