| 摘要 |
A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition comprises a plasma chamber 2, a substrate holder 4 disposed in the chamber, a gas flow system 13, 16 for feeding process gases into the chamber and removing them therefrom, and a microwave coupling configuration 12 for feeding microwaves from a microwave generator 8 into the chamber, the coupling configuration comprising an annular dielectric window 18 formed in one or several sections, a coaxial waveguide 14 having a central inner conductor 20 and an outer conductor 22, and a waveguide plate 24 comprising a plurality of apertures (28, figures 2-4) disposed in an annular configuration with a plurality of arms extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber. The waveguide plate preferably comprises an odd number of apertures, more preferably a prime number, and most preferably 3, 5 or 7. Channels 26 for supplying coolant or process gas may be defined in the plurality of arms. The inner conductor may be a floating conductor supported by a central portion of the waveguide plate. Also disclosed is a method of manufacturing synthetic diamond material using the apparatus of the invention. |
