| 摘要 |
<p>PURPOSE: A formation method of a semiconductor device is provided to improve reliability of the semiconductor device by easily controlling a profile of ion injection of a cell region and improving cell characteristics. CONSTITUTION: An element isolation film(102) is formed on a semiconductor substrate(100). A buffer insulating region is formed on the semiconductor substrate. The semiconductor substrate comprises a cell region(A) and a peripheral circuit region(B). An active region(104) is defined by the element isolation film. A cell open mask opening the cell region is formed on the peripheral circuit region. An ion is injected in the cell region which is exposed by the cell open mask. A gate region(120) is formed by etching the semiconductor substrate and a nitride film by using a hard mask pattern as a mask.</p> |
