InSb THIN FILM MAGNETIC SENSOR AND FABRICATION METHOD THEREOF

摘要

The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer (3) that is an InSb thin film formed on a substrate (1), and an Al x Ga y In 1-x-y Sb mixed crystal layer (0‰ x, y‰ 1) (2) which shows resistance higher than the InSb layer (3) or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer (2) is provided between the substrate (1) and the InSb layer (3), and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17% (0.05 ‰ x+y ‰ 0.17).