发明名称 |
Manufacturing method of semiconductor integrated circuit device |
摘要 |
A manufacturing technique of a semiconductor integrated circuit device utilizing a defect correction technique of a reflection-type mask using extreme ultraviolet (EUV) light with a wavelength of about 13.5 nm as an exposure light source is provided. An auxiliary pattern having an opening diameter finer than that of an opening pattern in which a phase defect is generated is formed in an absorption layer in the vicinity of the opening pattern. The auxiliary pattern is a pattern for adjusting the exposure light amount at the time when the opening pattern is transferred to a photoresist film on a wafer. |
申请公布号 |
US8206889(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20090466014 |
申请日期 |
2009.05.14 |
申请人 |
TANAKA TOSHIHIKO;RENESAS ELECTRONICS CORPORATION |
发明人 |
TANAKA TOSHIHIKO |
分类号 |
G03F7/00;G03F1/24;G03F1/72;G03F1/74;G03F1/84;G03F7/20;H01L21/027 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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