| 摘要 |
PURPOSE: Fuse of a semiconductor device and a manufacturing method thereof are provided to effectively prevent uncut failure to be generated in the repair process by forming a capping layer through the surface processing. CONSTITUTION: A first fuse patterns(12) are formed on substrate(11). The first fuse patterns have a structure capped by an insulating layer(14) and a first anti oxidation layer(13A). The insulating layer comprises an open region(15) exposing the end of the first fuse patterns. A second fuse pattern(16A) interlinks an interval between the first fuse patterns. A protective film(17) comprises a fuse box exposing the second fuse pattern. A capping layer is formed on the surface of the second fuse pattern. A second anti oxidation layer is formed at the sidewall of the second fuse pattern.
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