发明名称 MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND CONTROL METHOD THEREOF
摘要 PURPOSE: A memory device, a memory system including the same, and a controlling method thereof are provided to increase a data bandwidth by applying a row command and a column command to a memory device through an additional channel. CONSTITUTION: A row command decoder(403) generates an inner row command by decoding a row command applied through a first channel. A first bank selecting unit(407) transmits the inner row command to a bank corresponding to a first bank address. A second address storage unit(411) receives a column address and a second bank address corresponding to a column command through a second channel. A second bank selecting unit(413) transmits an inner column command to the bank corresponding to the second bank address.
申请公布号 KR20120067509(A) 申请公布日期 2012.06.26
申请号 KR20100128942 申请日期 2010.12.16
申请人 SK HYNIX INC. 发明人 MOON, YOUNG SUK;LEE, HYUNG DONG;LEE, JEONG WOO;SHIN, SANG HOON
分类号 G11C7/10;G11C7/12;G11C8/08 主分类号 G11C7/10
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