发明名称 |
MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND CONTROL METHOD THEREOF |
摘要 |
PURPOSE: A memory device, a memory system including the same, and a controlling method thereof are provided to increase a data bandwidth by applying a row command and a column command to a memory device through an additional channel. CONSTITUTION: A row command decoder(403) generates an inner row command by decoding a row command applied through a first channel. A first bank selecting unit(407) transmits the inner row command to a bank corresponding to a first bank address. A second address storage unit(411) receives a column address and a second bank address corresponding to a column command through a second channel. A second bank selecting unit(413) transmits an inner column command to the bank corresponding to the second bank address.
|
申请公布号 |
KR20120067509(A) |
申请公布日期 |
2012.06.26 |
申请号 |
KR20100128942 |
申请日期 |
2010.12.16 |
申请人 |
SK HYNIX INC. |
发明人 |
MOON, YOUNG SUK;LEE, HYUNG DONG;LEE, JEONG WOO;SHIN, SANG HOON |
分类号 |
G11C7/10;G11C7/12;G11C8/08 |
主分类号 |
G11C7/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|