发明名称 |
Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions |
摘要 |
A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.
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申请公布号 |
US8207040(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US201113021029 |
申请日期 |
2011.02.04 |
申请人 |
CHUNG HOI-SUNG;SHIN DONG-SUK;KIM DONG-HYUK;HEO JUNG-SHIK;KIM MYUNG-SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG HOI-SUNG;SHIN DONG-SUK;KIM DONG-HYUK;HEO JUNG-SHIK;KIM MYUNG-SUN |
分类号 |
H01L21/8238;H01L21/336;H01L21/36;H01L21/425 |
主分类号 |
H01L21/8238 |
代理机构 |
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地址 |
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