发明名称 |
Couplings within memory devices |
摘要 |
A memory device includes a first bit line coupled to a first source/drain region of a first multiplexer gate, a second bit line coupled to a first source/drain region of a second multiplexer gate, and a sensing device having an input coupled to a second source/drain region of the first multiplexer gate and a second source/drain region of the second multiplexer gate. The input of the sensing device is formed at a vertical level that is different than a vertical level at which at least one of the first and second bit lines is formed. |
申请公布号 |
US8208278(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20090637163 |
申请日期 |
2009.12.14 |
申请人 |
GODA AKIRA;ARITOME SEIICHI;MICRON TECHNOLOGY, INC. |
发明人 |
GODA AKIRA;ARITOME SEIICHI |
分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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