APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

摘要

PURPOSE: A silicon carbide single crystal manufacturing device is provided to make a SiC single crystal grow up for a long time by reducing deposition of the SiC poly-crystal at a portion which does not want. CONSTITUTION: A first purge gas inflow port(8b) is included at the inner wall of a heating container. A purge gas supply source(14) supplies purge gas to the first purge gas inflow port. A second purge gas inflow port is included at the external wall of a base. The base is located within a reacting chamber of the heating container. The base comprises a first side and a second side. The second side is an opposite side of the first side. A purge gas inflow tool(11) supports the base. The purge gas inflow tool supplies the purge gas to the base from the second side of the base.