FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A method for fabrication a semiconductor integrated circuit device is provided to improve a processing amount of probe inspection by simultaneously inspecting a plurality of probes. CONSTITUTION: First and second metal layers(21A, 21B) are formed by sequentially laminating a rhodium film and an Ni film. First and second probes(7A, 7B) are projected in a square trapezoidal shape on a lower side of a thin film sheet in a metal layer. A through hole(24) is formed on a polyimide film between the metal layer and a wiring(23). The wiring and the metal layer are electrically connected through the through hole. The second metal layer on which the second probe is formed and a planar pattern of the through hole are made by rotating the first metal layer on which the first probe is formed and the planar pattern of the through hole by 180°.