发明名称 Method for forming pattern and method for manufacturing semiconductor device
摘要 According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.
申请公布号 US8206895(B2) 申请公布日期 2012.06.26
申请号 US20080179198 申请日期 2008.07.24
申请人 YONEDA IKUO;MAGOSHI SHUNKO;KABUSHIKI KAISHA TOSHIBA 发明人 YONEDA IKUO;MAGOSHI SHUNKO
分类号 G03F7/207 主分类号 G03F7/207
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