发明名称 |
Method for forming pattern and method for manufacturing semiconductor device |
摘要 |
According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material. |
申请公布号 |
US8206895(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20080179198 |
申请日期 |
2008.07.24 |
申请人 |
YONEDA IKUO;MAGOSHI SHUNKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YONEDA IKUO;MAGOSHI SHUNKO |
分类号 |
G03F7/207 |
主分类号 |
G03F7/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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