| 摘要 |
PURPOSE: A method for directly combining semiconductor structures and a combined semiconductor structure formed using the same are provided to improve lifetime by including a cap layer between a bonding pad and dielectric material. CONSTITUTION: A cap layer is formed at the surface of first metal property on a first semiconductor structure(100). The first metal property includes copper. The cap layer includes metal and silicon. The surface of the cap layer defines a first bonding surface of the first metal property. A second bonding surface of second metal property on a second semiconductor structure(200) is directly combined with the first bonding surface of the first metal property. |
