发明名称 |
Dry etching method |
摘要 |
The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern. |
申请公布号 |
US8207066(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20090512094 |
申请日期 |
2009.07.30 |
申请人 |
INOUE YOSHIHARU;ISHIMURA HIROAKI;KOBAYASHI HITOSHI;ISHIHARA MASUNORI;ITO TORU;NISHIDA TOSHIAKI;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
INOUE YOSHIHARU;ISHIMURA HIROAKI;KOBAYASHI HITOSHI;ISHIHARA MASUNORI;ITO TORU;NISHIDA TOSHIAKI |
分类号 |
H01L21/00;H01L21/302;H01L21/461 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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