| 摘要 |
<p>PURPOSE: A method for manufacturing a rear junction solar cell is provided to reduce manufacturing costs by decreasing the number of the diffusion processes at a high temperature. CONSTITUTION: A p+ domain is formed by using plasma doping. An n+ domain is formed by using plasma doping. An FSF layer(150) is formed on the front of a silicon wafer. A thermal oxide layer(160',160) is formed on the front and rear of the silicon wafer again. The dopant doped on the p+ domain, the n+ domain, and the FSF layer is activated in a thermal oxide forming process. An emitter electrode and a base electrode(190) are formed on the rear.</p> |
