发明名称 |
Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same |
摘要 |
A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal film or metal nitride film 2′.
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申请公布号 |
US8207054(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20090512549 |
申请日期 |
2009.07.30 |
申请人 |
SHIBATA MASATOMO;HITACHI CABLE, LTD. |
发明人 |
SHIBATA MASATOMO |
分类号 |
C30B29/38;H01L21/28;C30B25/04;C30B29/40;H01L21/20;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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