INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An insulated gate type bipolar transistor and a manufacturing method thereof are provided to reduce on-voltage while maintaining internal pressure by forming an insulating layer between an N-drift layer and a P-drift layer. CONSTITUTION: A first drift layer is formed on the first main surface of a buffer layer. A second drift layer of first conductive type is formed on the first drift layer. A base layer of second conductive type is formed on a second drift layer. An emitter layer of the first conductive type is selectively formed on the surface of the base layer. A gate electrode(8) is formed between gate insulating layers(7). A collector layer of the second conductive type is formed the second main surface of the buffer layer. A collector electrode is formed on the collector layer.