Vertically stacked field programmable nonvolatile memory and method of fabrication

摘要

A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.