| 摘要 |
PURPOSE: A PMOS transistor including an extended active region is provided to suppress an HEIP(Hot Electron Induced Punchthrough) phenomenon by improving the shape of the active region of the PMOS transistor. CONSTITUTION: A device isolation layer defines an active region(10). A gate is formed on the channel region of the upper side of the active region. A drain region and a source region are formed in the active region of both sides of the gate. The active region includes an active tap(10a,10b) to protrude the edge of the channel region to the outside of the gate in a channel width direction. The gate tap is formed in an area where the drain region and the source region contact with the device isolation layer. |
