| 摘要 |
A silicon manufacturing apparatus capable of being stably operated over a long period by suppressing the deposition of silicon at the bottom end part of a reaction tube and those portions other than the inner surface of the reaction tube, wherein a reactant gases are led into the inside wall of the heated reaction tube to deposit silicon and the deposited silicon is taken out from the bottom end opening of the reaction tube. A first gas feed port (31) formed of an annular slit and feeding a seal gas and/or an etching gas toward the bottom part is formed on the outer peripheral side of the reaction tube (11) near the bottom part, and a second gas feed port (33) is formed at a position apart from the first gas feed port (31). Thus, the seal gas and/or the etching gas can be fed from the second gas feed port (33) toward the wall surface of a member in which the first gas feed port (31) is formed on the outer periphery of the first gas feed port (31).
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