ELECTROSTATIC DISCHARGE CIRCUIT

摘要

PURPOSE: An electrostatic discharge circuit is provided to efficiently protect a semiconductor device from static electricity by decreasing an operation initialing voltage and increasing an operation maintaining voltage. CONSTITUTION: An N type well is adjacent to a P type well. A first diffusion region(301) and a second diffusion region(303) are formed on the N type well. A third diffusion region is formed on the N type well or in a boundary between the N type well and the P type well. Fourth to sixth diffusion regions are formed on the P type well. An insulation layer(313) is contacted with the upper side of the N type well between the second diffusion region and the third diffusion region. A conductor(315) is formed on the upper side of the insulation layer and is connected to the fourth diffusion region.