THIN LAYER DEPOSITION METHOD

摘要

PURPOSE: A method for depositing a thin film is provided to form a uniform thin film by supplying gas to a space between substrates. CONSTITUTION: A processing chamber(10) includes a gas supply inlet in a fixed position of a sidewall. A substrate(S) of multiple columns is parallelly loaded inside the processing chamber in an inline form. A gas supply device(20) includes a tank and a valve storing a reaction gas and a purge gas. A gas spread and supply groove(30) is formed on one sidewall of the processing chamber. An exhaust device(40) exhausts the processing chamber.