METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the short between an active area and a storage node contact plug by forming an etching prevention film on a bottom surface of the storage node contact hole. CONSTITUTION: An inter-layer insulating film(35) is formed on a substrate(31). The inter-layer insulating film is selectively etched and a storage node contact hole is formed. An etching prevention film(37) is formed on a bottom surface of the storage node contact hole. A conductive film(39) for the storage node contact plug is formed to fill the storage node contact hole. The conductive film for the storage node contact plug is etched and a damascene pattern(40) is formed.