发明名称 |
A METHOD FOR FABRICATING A SENSOR |
摘要 |
PURPOSE: A MEMS(Semiconductor Micro-Electro-Mechanical System) base sensor manufacturing method is provided to efficiently mass produce a small pressure sensor of high sensitivity. CONSTITUTION: A MEMS base sensor manufacturing method is as follows. An interconnection window is formed in the upper part of a first device layer(705). The interconnection unit is arranged in the first device layer(720). A diaphragm cavity is formed in the upper part of a second device layer of a second device wafer(730). The upper part of the first device layer is bonded in the upper part of the second device layer so that a diaphragm is formed on the diaphragm cavity. A first handle layer and a first insulator layer are removed from the first device wafer(740). A sensing element sensing a bending of the diaphragm is arranged in the first device layer(755). A cap is arranged on the diaphragm(765).
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申请公布号 |
KR20120067306(A) |
申请公布日期 |
2012.06.25 |
申请号 |
KR20110135385 |
申请日期 |
2011.12.15 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GAMAGE SISIRA KANKANAM;MANTRAVADI NARESH VENKATA |
分类号 |
B81C1/00;B81B3/00;G01L9/08;H01L29/84 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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