| 摘要 |
There is provided a nonvolatile storage device including a plurality of component memory layers. The plurality of component memory layers are stacked In a direction perpendicular to a layer surface. Each of the plurality of component memory layers includes a first wiring, a second wiring provided non-parallel to the first wiring and a stacked structure unit provided between the first wiring and the second wiring and including a recording layer. At least one of the first wiring and the second wiring includes a protruding portion provided on a portion opposed to the recording layer and protruding toward the recording layer side. |
