SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain the reliability of a device by forming a P-type dipole capping layer in a PMOS(P-channel Metal Oxide Semiconductor) area. CONSTITUTION: A gate insulating layer(12) is formed on a substrate(10). Dipole capping layers(13A,13B) are formed on the gate insulating layer. A metal gate film(15A) and a polysilicon layer are laminated on the dipole capping layer. The polysilicon layer, the metal gate film, the dipole capping layer, and the gate insulating layer are etched and a gate pattern is formed. A gate spacer(18) is formed on a sidewall of the gate pattern.