| 摘要 |
<p>PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to improve reliability of a reading operation and a program by preventing the leakage of trapped electrons. CONSTITUTION: A tunnel insulating layer(102) is formed on a semiconductor substrate(100). A floating gate is formed on the tunnel insulating layer. The floating gate is formed by laminating a first conductive film(104a) and a second conductive film(104b). A dielectric film(112) is formed on an upper portion of the floating gate. A control gate(114) is formed on the top of the dielectric film.</p> |
