| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR NANOSTRUCTURES N-PBTE:BI ON GLASSCERAMIC SUBSTRATES WITH IMPROVED THERMOELECTRIC PROPERTIES |
| 摘要 |
A method for producing semiconductor nanostructures n-PbTe:Bi on glassceramic substrates with improved thermoelectric properties, at which as a raw material bismuth-doped lead telluride n-PbTe:Bi is used, the evaporator temperature makes T=(970±10) K, temperature of the substrate - TP= (470±10) K K, and the thickness of nanostructures is d = (200-250) nm. |
| 申请公布号 |
UA70807(U) |
申请公布日期 |
2012.06.25 |
| 申请号 |
UA20110014622U |
申请日期 |
2011.12.09 |
| 申请人 |
VASYL STEFANYK PRYKARPATTIA NATIONAL UNIVERSITY |
发明人 |
FREIK DMYTRO MYKHAILOVYCH;HORICHOK IHOR VOLODYMYROVYCH;DZUNDZA BOHDAN STEPANOVYCH;LYSIUK YURII VASYLIOVYCH;HALUSHAK MARIAN OLEKSIIOVYCH |
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