| 摘要 |
PURPOSE: A substrate processing apparatus is provided to easily adjust flow rate and fluid pressure of process gas provided within a chamber by controlling a fluid pressure control ring through a height control rod. CONSTITUTION: A gas box(3) is prepared on the top of a chamber. A heater block(6) heats a substrate(W) carried by a substrate gateway. A plurality of fluid pressure control rings(10a-10c) and a ring support plate(20) is installed between the gas box and a baffle(5). The ring support plate is accepted in a cutting groove(3b) formed by cutting the bottom of the gas box. A height control rod is respectively fixed and coupled to the plurality of fluid pressure control rings. The plurality of fluid pressure control rings is accepted in a receiving groove. The receiving groove is connected to an extension groove by passing through the upper side of the ring support plate. |
