| 摘要 |
An ITO sputtering target material and an ITO sputtering target by which a film of a low resistance is obtained although an oxygen partial pressure is changed to some degree during sputtering, and an ITO sintered body suitable for the ITO sputtering target material and the ITO sputtering target are provided. An ITO(Indium-Tin-Oxide) sintered body is characterized in that a mean value of maximum diameters of fine grains existing in a In2O3 parent phase that is a principal grain is not less than 0.2 mum. An ITO(Indium-Tin-Oxide) sintered body is characterized in that a mean value of widths of fine grain free zones from grain boundaries of a In2O3 parent phase that is a principal grain is not less than 0.3 mum. An ITO(Indium-Tin-Oxide) sintered body(10) is characterized in that a mean value of maximum diameters of fine grains(2) existing in a In2O3 parent phase(1) that is a principal grain is not less than 0.2 mum, and a mean value of widths of fine grain free zones(5) from grain boundaries(3) of the In2O3 parent phase is not less than 0.3 mum. The ITO sintered body is a sputtering target material. An ITO sputtering target comprises the ITO sintered body, and a backing plate. |
