| 摘要 |
PURPOSE: A light emitting device is provided to prevent a leakage current and improve external light emission efficiency by concentrating a current on a transparent electrode. CONSTITUTION: A conductive host substrate is provided. A p-type nitride semiconductor layer(150), an active layer and an n-type nitride semiconductor layer are successively formed on the conductive host substrate. A transparent electrode layer(180) is formed on an n-type nitride semiconductor layer and covers at least part of the surface of the n type nitride semiconductor layer on which a trench is formed. An n type electrode(190) is formed to overlap the transparent electrode layer with the n type semiconductor layer. |
