| 摘要 |
<p>The invention relates to a method for manufacturing an ultrasound sensor(1) comprising the steps for forming by conventional silicon technology a first wafer (111, device wafer) including at least one ultrasound transducer (200) and an ultrasound cavity (4). In accordance with the invention it includes following steps: connecting to the first wafer (111) a second wafer (112) including a substrate (108) and a poly-Silayer (201), the second wafer (112) is connected to the first wafer (111) such that the poly-Si layer (201) forms a connecting surface, and the substrate (109) of the second wafer (112) is etched away in the area of the cavity (4) in order to form a sensor diaphragm (201) of the poly-Silayer (111).</p> |
