INSULATING LAYER POLISHING SLURRY COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: An insulation layer polishing slurry composition and a method for manufacturing a semiconductor device using the same are provided to polish an insulation layer without damaging a metal pattern by including metal passivation agents with an amine group in the insulation layer polishing slurry composition. CONSTITUTION: A bottom insulating layer(20) is formed on a substrate(10). A contact plug(25) electrically connected to a transistor is formed in the bottom insulation layer. A bottom electrode(31) is formed on the contact plug and the bottom insulation layer. A magnetic tunnel junction structure is formed on the bottom electrode. The magnetic tunnel junction structure includes a ferromagnetic pinned layer(33), a tunnel barrier layer(35), and a free layer(37).