| 摘要 |
A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate (11), a first semiconductor layer (15) on the substrate (11), a second semiconductor layer (19) on the first semiconductor layer (15), and a multi-quantum well structure (17) including at least one well layer (17b) and at least one barrier layer (17a) between the first and second semiconductor layers. A carrier trap portion (27) is formed in at least one layer within the multi-quantum well structure (17). The carrier trap portion (27) has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof. |
