| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of rewiring or a protruding electrode formed on a chip while suppressing an increase in the number of steps. <P>SOLUTION: After forming a semiconductor substrate having wiring 2b and a pad electrode 2a, a stress relaxation layer 4 on the semiconductor substrate, and an alloy seed film 5 on the stress relaxation layer 4, a reactive barrier insulating film 6 is formed between the stress relaxation layer 4 and the alloy seed film 5 by reacting the stress relaxation layer 4 and the alloy seed film 5 using heat treatment. Rewiring 8 or a protruding electrode is formed on the alloy seed film 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
