| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having a GaN semiconductor layer grown on a glass substrate by a sputtering method. <P>SOLUTION: A nitride semiconductor element 10a, 10a' has a glass substrate 11, a ZnO layer 12a arranged on the surface of the glass substrate 11, and a GaN semiconductor layer 13 formed in contact with the surface of the ZnO layer 12a by a spattering method. A Ti layer may be provided in place of the ZnO layer 12a, and the ZnO layer 12a may be arranged between the Ti layer and the GaN semiconductor layer 13. The Ti layer may be arranged between the ZnO layer 12a and the GaN semiconductor layer 13. The ZnO layer 12a or the Ti layer grown on the glass substrate 11 is in a state oriented preferentially to (0002) plane, and since the crystal lattice constant is similar to that of GaN, the GaN semiconductor layer 13 formed on the surface of the ZnO layer 12a or the Ti layer by a spattering method is also in a state oriented preferentially to (0002) plane. <P>COPYRIGHT: (C)2012,JPO&INPIT |
