发明名称 SUBSTRATE PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve workability of a method for correcting temperature inside treatment furnace and to reduce costs. <P>SOLUTION: Prior to execution of a method for correcting temperature inside treatment furnace, a position of a temperature measuring instrument support mechanism 10 is defined and stored (A1). When the method for correcting temperature inside treatment furnace is executed, the temperature measuring instrument support mechanism 10 is shifted from a retracted state into a projected state, and the temperature measuring instrument support mechanism 10 is transferred to under an insertion port 20 opened in a seal cap 219. The temperature measuring instrument support mechanism 10 is lifted by a wafer transfer device elevator 125b, and a temperature measuring instrument 18 is inserted into the insertion port 20. The seal cap 219 is lifted by a boat elevator 151, and a treatment furnace 202 is closed by the seal cap 219 (A2). Temperature inside the treatment furnace 202 is raised by a heater 206 (A3). At the same time, the temperature inside the treatment furnace 202 is measured with the temperature measuring instrument 18 (A4). A temperature correction value is calculated and stored (A5). This is repeated until the soaking temperature falls within the specified value (A6-7), and when it falls within the specified value, the temperature correction method is ended. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012119557(A) 申请公布日期 2012.06.21
申请号 JP20100269102 申请日期 2010.12.02
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 WATANABE AKITO;TAKASHIMA KATSUMI
分类号 H01L21/31;B65G49/07;H01L21/22;H01L21/677 主分类号 H01L21/31
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