发明名称 SENSE AMPLIFIER STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.
申请公布号 US2012154046(A1) 申请公布日期 2012.06.21
申请号 US201113181889 申请日期 2011.07.13
申请人 CHUN DUK SU;HYNIX SEMICONDUCTOR INC. 发明人 CHUN DUK SU
分类号 H03F3/45 主分类号 H03F3/45
代理机构 代理人
主权项
地址