| 摘要 |
A method for fabricating a semiconductor device includes forming a first trench by etching a substrate, forming first spacers on sidewalls of the first trench, forming a second trench by etching the substrate under the first trench, forming second spacers on sidewalls of the second trench, forming a third trench, which has a wider width than a width between the second spacers, by etching the substrate under the second trench, forming a liner layer on the surface of the third trench, and exposing one of the sidewalls of the second trench by selectively removing the second spacers. |
