| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode, light-emitting diode lamp and luminaire which have both rapid response and high output, and emit infrared light. <P>SOLUTION: A light-emitting diode comprises an active layer 11 of quantum well structure where a well layer comprising a compound semiconductor having a composition formula (In<SB POS="POST">X1</SB>Ga<SB POS="POST">1-X1</SB>)As (0≤X1≤1) and a barrier layer comprising a compound semiconductor having a composition formula (Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X2</SB>)As (0≤X2≤1) are laminated alternately, a light-emitting part 7 having a first clad layer 9 and a second clad layer 13 sandwiching the active layer 11 therebetween, a current diffusion layer 8 formed on the light-emitting part 7, and a functional substrate 3 joined to the current diffusion layer 8. The first and the second clad layers 9, 13 comprise a compound semiconductor having a composition formula (Al<SB POS="POST">X3</SB>Ga<SB POS="POST">1-X3</SB>)<SB POS="POST">Y1</SB>In<SB POS="POST">1-Y1</SB>P (0≤X3≤1, 0<Y1≤1), and the number of pairs of the well layer and the barrier layer is 5 or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
