发明名称 WURTZITE PIEZOELECTRIC THIN FILM, METHOD AND APPARATUS FOR MANUFACTURING THE THIN FILM, AND THIN FILM RESONATOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an wurtzite piezoelectric thin film which has any other orientations than a vertical orientation type and a parallel orientation type, and in which characteristics which are absent in the prior arts, can be obtained by the orientation. <P>SOLUTION: A thin film comprised of a material having an wurtzite crystal structure is provided, in which the tilting angle that is formed from a normal and a c-axis, with respect to the thin film, is larger than the critical tilting angle with which a piezoelectric constant e<SB POS="POST">33</SB>for longitudinal waves become zero, and smaller than 90&deg;. The thin film can be used for a thin film resonator having a property, which is absent in the prior arts, in which longitudinal wave vibrations of a phase inverse to the wurtzite crystal thin film of vertical orientation occur. The thin film can be manufactured by irradiating a surface of a substrate S with ion beams IB so as to be incident at an angle &alpha; which exceeds 10&deg; and smaller than or equal to 40&deg;, while depositing a material M having the wurtzite crystal structure on the surface of the substrate S. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012116736(A) 申请公布日期 2012.06.21
申请号 JP20100270539 申请日期 2010.12.03
申请人 NAGOYA INSTITUTE OF TECHNOLOGY;DOSHISHA 发明人 YANAGIYA TAKAHIKO;SUZUKI MASASHI;WATANABE YOSHIAKI
分类号 C30B29/38;C23C14/48;C30B23/08;H03H3/02;H03H9/17 主分类号 C30B29/38
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