| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a resist pattern with an excellent dry-etching resistance by a simple method. <P>SOLUTION: A coating film 7 containing water soluble polymer is formed on a pattern of a photoresist film 6. After a coating layer 8 is formed by, for example, crosslinking of polymer in the photoresist film 6 and the water soluble polymer in first heat treatment, the coating film 7 is removed. Furthermore, a resin film 9 containing polymer with higher dry-etching resistance than that of the polymer in the photoresist film 6 is formed on the coating layer 8. After a mixing layer 10 to the coating layer 8 is formed by second heat treatment, the resin layer 9 is removed, so as to form a resist mask layer 20 with a three-layer constitution of the photoresist film 6, the coating layer 8 and the mixing layer 10, and etch a ground layer using the resist mask layer as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
