发明名称 |
ACTIVE MATERIAL, ELECTRODE INCLUDING THE ACTIVE MATERIAL AND MANUFACTURING METHOD THEREOF, AND SECONDARY BATTERY |
摘要 |
An electrode in which a silicon layer is provided over a current collector, a thin film layer having a thickness within a certain range is provided on a surface of the silicon layer, and the thin film layer contains fluorine, is used for a power storage device. The thickness of the thin film layer containing fluorine is greater than 0 nm and less than or equal to 10 nm, preferably greater than or equal to 4 nm and less than or equal to 9 nm. The fluorine concentration of the thin film layer containing fluorine is preferably as high as possible, and the nitrogen concentration, the oxygen concentration, and the hydrogen concentration thereof are preferably as low as possible.
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申请公布号 |
US2012156556(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201113307052 |
申请日期 |
2011.11.30 |
申请人 |
KURIKI KAZUTAKA;ICHIJO MITSUHIRO;ENDO TOSHIYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KURIKI KAZUTAKA;ICHIJO MITSUHIRO;ENDO TOSHIYA |
分类号 |
H01M10/02;H01M4/58;H01M4/66 |
主分类号 |
H01M10/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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