发明名称 METAL-INSULATOR-METAL CAPACITORS WITH HIGH CAPACITANCE DENSITY
摘要 Metal-insulator-metal (MIM) capacitors and methods for fabricating MIM capacitors. The MIM capacitor includes an interlayer dielectric (ILD) layer with apertures each bounded by a plurality of sidewalls and each extending from the top surface of the ILD layer into the first interlayer dielectric layer. A layer stack, which is disposed on the sidewalls of the apertures and the top surface of the ILD layer, includes a bottom conductive electrode, a top conductive electrode, and a capacitor dielectric between the bottom and top conductive electrodes.
申请公布号 US2012153434(A1) 申请公布日期 2012.06.21
申请号 US20100969004 申请日期 2010.12.15
申请人 ABOU-KHALIL MICHEL J.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ABOU-KHALIL MICHEL J.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S.;STAMPER ANTHONY K.
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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