发明名称 |
METAL-INSULATOR-METAL CAPACITORS WITH HIGH CAPACITANCE DENSITY |
摘要 |
Metal-insulator-metal (MIM) capacitors and methods for fabricating MIM capacitors. The MIM capacitor includes an interlayer dielectric (ILD) layer with apertures each bounded by a plurality of sidewalls and each extending from the top surface of the ILD layer into the first interlayer dielectric layer. A layer stack, which is disposed on the sidewalls of the apertures and the top surface of the ILD layer, includes a bottom conductive electrode, a top conductive electrode, and a capacitor dielectric between the bottom and top conductive electrodes.
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申请公布号 |
US2012153434(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US20100969004 |
申请日期 |
2010.12.15 |
申请人 |
ABOU-KHALIL MICHEL J.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOU-KHALIL MICHEL J.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S.;STAMPER ANTHONY K. |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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