SPIN CONDUCTANCE STRUCTURE, MEMORY ELEMENT, SPIN TRANSISTOR, AND METHOD FOR FORMING SPIN CONDUCTANCE STRUCTURE

摘要

Provided is technology for high-quality epitaxial growth of a group IV semiconductor (111) surface on a ferromagnetic Heusler alloy (111) surface. This method for forming a spin conductance structure includes: a first ferromagnetic lamination step (S41) in which a single-crystal ferromagnetic Heusler alloy (X(3-x)YxZ, where Z corresponds to the group IV semiconductor) that contains a group IV semiconductor in the constituent elements is laminated on a group IV semiconductor substrate having a surface with a Miller index (111) as the growth surface; a metal supply stopping step (S42) that stops the supply of a metal (corresponding to X(3-x)Yx) of the elements composing the ferromagnetic Heusler alloy; a semiconductor supply stopping step (S44) for stopping the supply of the group IV semiconductor (corresponding to Z) of the elements composing the ferromagnetic Heusler alloy in a state (S43) where the group IV semiconductor surface has been formed on the outermost surface; and a semiconductor lamination step (S45) for laminating the group IV semiconductor on the group IV semiconductor surface formed on the outermost surface.