发明名称 |
MEMORY DEVICE COMPRISING A STRAINED SEMICONDUCTOR DOUBLE-HETEROSTRUCTURE AND QUANTUM DOTS |
摘要 |
An embodiment of the invention relates to a memory comprising a strained double-heterostructure (110) having an inner semiconductor layer (115) which is sandwiched between two outer semiconductor layers, (120, 125) wherein the lattice constant of the inner semiconductor layer differs from the lattice constants of the outer semiconductor layers, the resulting lattice strain in the double-heterostructure inducing the formation of at least one quantum dot inside the inner semiconductor layer, said at least one quantum dot being capable of storing charge carriers therein, and wherein, due to the lattice strain, the at least one quantum dot has an emission barrier (Eb) of 1,15 eV or higher, and provides an energy state density of at least three energy states per 1000 nm3, all said at least three energy states (186) being located in an energy band (DeltaWb) of 50 meV or less. |
申请公布号 |
WO2012080076(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
WO2011EP72181 |
申请日期 |
2011.12.08 |
申请人 |
TECHNISCHE UNIVERSITAET BERLIN;PROF. DR. BIMBERG, DIETER;GELLER, MARTIN;NOWOZIN, TOBIAS;MARENT, ANDREAS |
发明人 |
PROF. DR. BIMBERG, DIETER;GELLER, MARTIN;NOWOZIN, TOBIAS;MARENT, ANDREAS |
分类号 |
H01L29/12;B82Y10/00;G11C16/04;H01L21/336;H01L29/06;H01L29/66;H01L29/68;H01L29/778;H01L29/788 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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