发明名称 COMPOUND FOR RESIST AND RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition having high sensitivity, with which a resist pattern with high resolution can be prepared and a semiconductor device having a high integration degree can be manufactured with high productivity, and to provide a compound that can be used for the composition. <P>SOLUTION: The resist composition contains at least one kind of a resist compound (A): (a) which is produced by reacting a reagent for introduction of a crosslinking reactive group capable of directly or indirectly inducing a crosslinking reaction upon exposure to any radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, extreme ultraviolet (EUV), electron beam, X-ray and ion beam with a polyphenol compound produced by a condensation reaction between a 5-45C aromatic ketone or aromatic aldehyde and a 6-15C compound having 1 to 3 phenolic hydroxyl groups; (b) which has a molecular weight of 300 to 5000; and (c) which includes at least one kind of the above described crosslinking reactive group. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012118551(A) 申请公布日期 2012.06.21
申请号 JP20120006153 申请日期 2012.01.16
申请人 MITSUBISHI GAS CHEMICAL CO INC 发明人 ECHIGO MASATOSHI;OGURO MASARU
分类号 G03F7/027;C07C43/225;C07C69/54;C07D303/27;G03F7/004;G03F7/038;H01L21/027 主分类号 G03F7/027
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