| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element, a semiconductor optical element, and a semiconductor integrated element that are capable of quickly dissipating heat generated in the elements during operation to the outside of the elements and are capable of suppressing increase in cost and power consumption for achieving the dissipation. <P>SOLUTION: For example, in a semiconductor laser operating by recombination of electrons and holes in a region in an active layer 11 between a p-type semiconductor layer 17 formed above an n-type semiconductor substrate 13 and the n-type semiconductor substrate 13, a tunnel layer 16 is formed above a region, in which the electrons and the holes are recombined, in the active layer 11, and the top surface of a semiconductor element (the semiconductor laser) is used as a heat-radiating surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
