发明名称 |
METHOD OF FABRICATING AVALANCHE PHOTODIODE |
摘要 |
A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.
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申请公布号 |
US2012156826(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201113273257 |
申请日期 |
2011.10.14 |
申请人 |
SIM JAE SIK;KIM KI SOO;MHEEN BONG KI;OH MYOUNG SOOK;KWON YONG HWAN;NAM EUN SOO;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SIM JAE SIK;KIM KI SOO;MHEEN BONG KI;OH MYOUNG SOOK;KWON YONG HWAN;NAM EUN SOO |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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