| 摘要 |
Methods for plating metal over features of a semiconductor wafer and devices that can be formed by these methods are disclosed. One such method includes forming a barrier layer over the substrate using electroless plating and forming a copper layer over the barrier layer. In some implementations, the semiconductor wafer is a GaAs wafer. Alternatively or additionally, the feature over which metal is plated can be a through-wafer via. In some implementations, a seed layer over the barrier layer can be formed using electroless plating. |
